E-MRS Spring 2012 - Symposium A

Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III

 Full Program Sympo A  1.25 Mb

Advanced silicon materials research is crucial to meet the requirements of future microelectronics, nanoelectronics, photovoltaics, and power electronics. Improvement of silicon crystal quality with reduced density of crystal defects, and the enhancement of material features by doping and co-doping with light elements are part of the major approaches to meet the requirements of next generation silicon technologies with ongoing scaled down feature sizes of transistors. Also, silicon-based microsystems, which integrate microelectronic and micromechanical devices, are of increasing importance in automobiles and high quality of silicon is highly demanded. For Photovoltaic applications, more than 90% of the annual solar cell production is based on crystalline silicon wafers and the production of sufficiently pure solar grade silicon at low manufacturing costs is one of the most challenging and urgent tasks.

Scope 

This symposium will provide a forum for scientists from research and industry to discuss recent results and developments in silicon materials research. Topics will be centered on fundamental research as well as technological problems associated with point defects and extended defects in bulk silicon and silicon devices. Efforts will be made towards the production of high quality silicon materials. A fruitful discussion with mutual benefit is expected from the interaction and scientific exchange between the communities working in the silicon-based technologies applied in the fields of information, energy, and environment.

This symposium will include, but will not be exclusively limited to, the following topics:

Silicon for electronic applications

• modeling of defect generation and modeling of crystal growth
• vacancies, interstitials, and related defects in silicon and defect evolution in wafer processing
• vacancy and interstitial related point defect complexes with oxygen, nitrogen, carbon, and hydrogen
• complexes of dopants with intrinsic point defects and light elements
• gettering of metallic impurities and impurity precipitation in silicon
• interaction of metals with dopants and impurity atoms
• diffusivity and co-doping of light elements
• defect engineered and defect-free silicon wafer
• silicon and silicon germanium on insulator
• strain engineering of substrates and wafer processing
• large diameter crystals and innovation in crystal growth
• evolution and control of defects in large diameter silicon epitaxial wafers
• characterization and control of point-defects for void-free perfect crystals
• new wafering technologies and defect evolution in wafering processes
• advanced methods of defect diagnostics
• defects in nano-engineered structures

Silicon based photovoltaics

• modeling of bulk crystal growth of solar silicon
• improvements in polycrystalline silicon refinement
• novel silicon feedstocks for photovoltaics
• solar grade silicon definition
• carbon, phosphorous and boron control in solar grade silicon
• silicon based solar cell concepts
• advances in nanocrystalline silicon growth and modeling
• silicon nanowires and nanodots
• silicon based thin layer and multilayer solar cells
• improvement of solar cell efficiency by gettering and passivation processes
• defects in solar cells and novel methodologies for their characterization
• solar cell efficiency degradation issues
• gettering of metal impurities
• interaction of dopants with intrinsic point defects
• mono-crystalline silicon for solar cell applications

Silicon for power electronics

• crystal growth of high-quality 8-inch FZ crystals
• crystal growth of very-low-oxygen MCZ crystals
• uniform doping of donor/acceptor impurities in FZ crystals
• point and extended defects induced by neutron transmutation doping (NTD)
• point defects in  FZ crystals for power devices thermal annealing recovery of NTD induced damages point defects

Preliminary list of invited speakers:

• K. Araki, Covalent Silicon Corporation, Niigata, Japan - “Effect of hydrogen termination on surface during high-temperature Ar annealing to maintain reconstructed Si surface”
• B. Ceccaroli, MARCHE AS, Kristiansand, Norway - “Recent Norwegian research activities correlating feedstock properties and good crystal/wafer performances”
• B. Cheng, Institute of Semiconductors, Chinese Academy of Sciences, Beijing China - “Growth of high-quality GeSn alloys for high-speed electronic devices”
• S. Estreicher, Texas Tech University, Lubbock, USA - “Phonon dynamics of impurities in Si and Si nanostructures: thermal conductivity and isotope effects”
• F. Hussain, King Abdullah University of Science and Technology, Saudi Arabia - “Prospects and Challenges of Contact Engineering in Nanowire Devices”
• R. JOB, University of Applied Science Münster, Germany - “Defect engineering for modern power devices”
  
• M. Kittler, IHP Frankfurt (Oder), Germany - “Electrical activity of crystal defects in solar silicon”
• E. J. Ovrelid, Department of Metallurgy, SINTEF Materials and Chemistry, Norway - “New advances in solar grade silicon”
• L. Pavesi, Nanoscience Lab - University of Trento, Italy - “Nanosilicon for improved solar cells“
• W. Skorupa, FZ Dresden, Germany - “Subsecond thermal processing for advanced electronics and photovoltaics”
• C. Spinella, IMM-CNR, Catania, Italy - “Synthesis and properties of silicon quantum dots for electronic and photovoltaic applications”
• Y. Yamashita, Okayama University, Japan - “Dislocation motion in impurity doped SiGe on Si substrate”
• D. Yang, University of Hangzhou, China - “Germanium-doped crystalline silicon for solar cells”
• H. Ye, Zhejiang University, Hangzhou, China - “Growth of highly ordered germanium nanoparticles using ultra-thin alumina masks”
• I. Yonenaga, Tohoku University Sendai, Japan - “Growth and Characterization of Silicon-Germanium crystals”
• M. Zacharias, University of Freiburg, Germany - “Defect engineering for nano-crystals”
• A. R. Peaker, University of Manchester, UK - "Recombination via point defects and their complexes in solar silicon"
  

Scientific Committee:

• Simona Binetti (University Milano-Bicocca, Italy)
• Stefan Estreicher (Texas Tech University, Lubbock, USA)
• Koichi Kakimoto (Kyushu University, Fukuoka, Japan)
• Bernd O. Kolbesen (Goethe-University Frankfurt, Germany)
• Bernard Pichaud (Universitè Paul Cezanne, Marseille, France)
• Bengt G. Svensson (University of Oslo, Norway)
• Michio Tajima (Inst. of Space and Astronautical Science (ISAS), Sagamihara, Japan)
• Wilfried von Ammon (Siltronic AG Burghausen, Germany)
• Jinzhong Yu (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
• Deren Yang (Hangzhou University, China)
• Eicke R. Weber (Fraunhofer Institute for Solar Energy Systems (ISE) Freiburg, Germany)

Proceedings will be published in phys. stat. sol.

Symposium organizers

Gudrun Kissinger
IHP
Im Technologiepark 25
15236 Frankfurt (Oder), Germany
Phone: +49-335-5625-388
Fax: +49-335-5625-681
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Sergio Pizzini
Inova Lab
Via Turraza, 20 Padova, Italy
Phone: +39-049-8088373
Fax: +30-049-8078893
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Hiroshi Yamada-Kaneta
Niigata University
Center for Quantum Materials Science
Ikarashi 2-8050, Nishi-ku,
Niigata 950-2181, Japan
Phone: +81-25-262-6155
Fax: +81-25-262-6136
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Junyong Kang
Xiamen University
Department of Physics
Xiamen 361005, China
Phone: +86-592-2185962
Fax: +86-13600908480
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