Program
 Abstract

The semiconductor industry is at the heart of the present society and is undergoing regular and fast changes. The improvement of the device performances has mainly relied on the continuous decrease of the MOS dimensions. During the last three decades, this miniaturisation has been assured by a “conservative” approach aiming at pursuing the use of well established process technologies (e.g. reduction of the implant energy for the junctions and of the oxide thickness for the gate stack). However, as the physical limits of conventional technologies are being reached, new and ever more complex phenomena are observed, that require a large amount of dedicated experimental and theoretical studies. For example, the defect-dopant interaction that limits the reduction of the S/D junction depth has generated extensive research on diffusion anomalies, defect engineering and alternative thermal processes.

However, it is possible that the requirements of the future technology nodes will not be met by these efforts and the introduction of new materials will be required to improve carrier mobility (strained Si and SiGe) and limit parasitic effects (SOI). Indeed, it is expected that both material types will be combined into a single process (SSOI) to further improve the device performances. This implies that, in addition to the materials fabrication and integration issues, all the previously mentioned phenomena (extensively studied in bulk Si) must be understood and controlled within these new materials, in particular taking into account strain and interface effects.

While trying to solve the issues confronting present technology, the research in this field, mainly developed around the ion implantation community, has recently yielded new concepts, that place ion implantation at the interface between conventional and nano-technologies for future devices. In addition, these new concepts are particularly attractive as they may be integrated at low cost in the fabrication process flow. Illustrative cases are the fabrication of nano-particles for non-volatile memories or the light emission from ion implantation defects.

This symposium intends to bring together scientists and industrials to share experimental results, physical models and new ideas in this “fast-growing” research area. Papers are solicited in the following topical areas (all relating to both Si and Si-based materials):

New materials (including strained SiGe, SiGeC, Ge and strained Si on bulk Si, SiGe virtual substrates and SOI), processes (growth and annealing) and characterization

• Dopant incorporation (ion implantation, plasma-immersion implantation, in-situ doping and other methods)
• Thermal process modules for ultra-shallow junctions (Solid Phase Epitaxial Regrowth, high ramp-rate RTA, laser and flash anneals…)
• Structural and electrical characterisation of defects (TEM, SIMS, 4PP, Hall, SRP, SCM and other methods)
• Surface and interface effects (point-defects injection and annihilation, dopant outdiffusion, interdiffusion and segregation at the Si/SiGe or oxide interfaces…)
• Dopant diffusion and activation (dopant-defect interaction, defect evolution, strain effects, clustering/deactivation, transient diffusion mechanisms, diffusion in a-Si…)
• Defect engineering (point-defect injection, vacancy generation by high-energy implants)
• Impurity co-implantation effects (C, F…)
• Novel concepts for future nano-devices (nano-particles for NVMs, ion implantation defects for light emission…)
• Simulations and modelling of the above listed effects in Si and Si-based materials (ab-initio, KMC, analytical…)
• Impact of the various issues listed above on the device performances (leakage currents, threshold voltages, reverse short channel effect …)

List of invited speakers:

• T.Skotnicki, ST Microelectronics Crolles, France – New materials and device architectures for the End-of-Roadmap CMOS nodes
• B.Ghyselen, SOITEC Grenoble, France – Strain engineering in SOI-type materials for future technologies
• E.Fitzgerald, MIT Boston, USA – SiGe for future technologies
• W.Lerch, Mattson Thermal Products, Dornstadt, Germany – Advanced activation of ultra-shallow junctions using flash-assisted RTP
• M.Foad, Applied Materials, Santa Clara, USA – Laser thermal processes for future CMOS technology
• I.Bork, Synopsis, USA – Trends, demands and challenges in TCAD
• W.Windl, Ohio State University, USA – Ab-Initio Assisted Process Modeling for Si-Based Nanoelectronic Devices
• L.Marques, Univ. of Valladolid, Spain – Atomistic simulations in Si processing: bridging the gap between atoms and experiments
• D.De Salvador, Univ. of Padova, Italy – B clustering and interaction with point defects and impurities
• C.C.Wang, TSMC, Taiwan – Dopant diffusion in strained silicon and strain-relaxed SiGe
• R.Gwilliam, Univ. of Surrey, UK – Dislocation engineering for Si-based light emitting diodes
• D.Tsoukalas, IMEL Athens, Greece – Recent advances in nanoparticle memories
• P.Eyben, IMEC Leuven, Belgium – Scanning Spreading Resistance Microscopy (SSRM) 2D carrier profiling for ultrashallow junction characterisation in deep-submicron technologies
• F.Giannazzo, IMM-CNR Catania, Italy – Scanning Capacitance Microscopy (SCM) 2D carrier profiling for ultrashallow junction characterisation in deep-submicron technologies

Accepted papers will be published in Materials Science and Engineering B

Symposium organizers:

Fuccio CRISTIANO
LAAS/CNRS
7 Avenue du Colonel Roche
31077 Toulouse
France
Tel.: +33 5 61 33 62 54
Fax: +33 5 61 33 62 08
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Benjamin COLOMBEAU
Advanced Technology Institute
University of Surrey
Guildford GU2 7XH, Surrey
U.K.
Tel: +44-1483-686093
Fax: +44-1483-689404
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Ray DUFFY
Philips Research Leuven
Kapeldreef 75
3001 Leuven
Belgium
Tel: +32-1628-1820
Fax: +32-1628-1706
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Lourdes PELAZ
Universidad de Valladolid
Departamento de Electricidad y Electronica
ETSI Telecomunicacion
47010-Valladolid
Spain.
Tel: +34-983-423000
(ext 5502)
Fax: +34-983-423675
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Suresh UPPAL
Materials Research Group,
School of Engineering Sciences
University of Southampton
Southampton SO17 1BJ
U.K.
Tel: +44-2380-598748
Fax: +44-2380-593016
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