E-MRS 2008 SYMPOSIA | Symposium J: Beyond silicon technology: materials and devices for post-Si CMOS |
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Full program: This meeting is one of three linked symposia at EMRS2008 dealing with future CMOS technologies and silicon materials. This symposium covers medium and long term issues associated with novel CMOS technologies and in particular alternatives to silicon channels. Moore’s Law has long driven CMOS transistor scaling, now the key question is: Can a shift away from silicon as the transistor channel material provide further performance enhancements? Can the properties of materials such as germanium, compound semiconductors, or carbon be exploited in viable devices and circuits? This symposium explores the alternatives in terms of new channel materials and alternative devices. The symposium will start with a general session of invited talks (joint with the other two linked symposia) exploring where CMOS is going and what alternatives are on the horizon and question the basic concepts that have driven the industry for 40 years. For example can a technology driven by alternative metal/dielectric/channel materials trigger the integration of new functions at the chip level? Can carbon nanotubes and graphene be engineered into integrateable devices? Does a massively parallel but “slow” transistor approach have the promise of being cheaper and better than ultra high speed devices. Essentially: where are we going? The theme will be revisited one evening in a panel discussion session in collaboration with the other related symposia. The first half of the symposium will be devoted to relatively conventional CMOS using alternative channel materials to silicon. The most evident are Ge, Ge rich SiGe and III-V compounds. Issues associated with Ge and Ge rich SiGe will be the subject of a joint session with the symposium "Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices". Papers dealing with these topics can be submitted to either symposium and will be considered jointly by the two programme committees. The second half of the symposium will consider more radical and by necessity long term approaches including nanotubes, graphene, quantum structures and cellular automata. This symposium aims to bring together the rapidly growing community exploring these concepts which embraces physicists, material scientists, chemists and engineers in academic and industrial research groups working on topics ranging from fundamental material aspects to advanced devices. The symposium will yield an overview of the present state of understanding and will contribute to defining the needs for further research.
The symposium will include, but will not be exclusively limited to, the following topics:
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Symposium J
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