Full program:  Symposium I

This is one of three linked symposia at the European Materials Research Society 2008 Spring Meeting (symposia I, J and K) dealing with future CMOS technologies and silicon materials. This symposium will provide an open forum for the presentation of original experimental and theoretical studies that can contribute to the physical understanding of the various phenomena related to the implementation and optimisation of new materials and processes for future Silicon Based Devices. In particular, it will focus on specific issues concerning the fabrication of strain engineered substrates, ultra-shallow junctions and silicide/germanide contacts.

The improvement of the device performances has mainly relied on the continuous decrease of the MOS dimensions. During the last three decades, this miniaturisation has been assured by a “conservative” approach aiming at pursuing the use of well established process technologies (e.g. reduction of the implant energy for the junctions and of the oxide thickness for the gate stack). However, as the physical limits of conventional technologies are being reached, new and ever more complex phenomena are observed, that require a large amount of dedicated experimental and theoretical studies. For example, the defect-dopant interaction that limits the reduction of the S/D junction depth has generated extensive research on diffusion anomalies, defect engineering and alternative thermal processes. In addition, it is possible that the requirements of the future technology nodes will not be met by these efforts and the introduction of new structures and materials will be required to improve carrier mobility (strained Si and SiGe) and limit parasitic effects (SOI). Indeed, it is expected that both material types will be combined into a single process (SSOI) to further improve the device performances. This implies that, in addition to the materials fabrication and integration issues, all the previously mentioned phenomena (extensively studied in bulk Si) must be understood and controlled within these new materials, in particular taking into account strain and interface effects.

This symposium intends to bring together scientists and industrials to share experimental results, physical models and new ideas in this “fast-growing” research area. A general opening session of invited talks will be held jointly with the other two linked symposia. In addition, issues associated with the formation of ultra-shallow junctions in Ge and Ge-rich SiGe will be discussed in a joint session with symposium J (Beyond silicon technology: materials and devices for post-Si CMOS).

The symposium will include, but will not be limited to, the following topics:
• Silicon and new materials (including SiGe(C), Si:C, Ge and strained Si on bulk Si, SiGe virtual substrates and SOI), processes (growth and annealing), and characterization
• Advanced dopant incorporation methods (ion implantation, plasma-immersion implantation, in-situ doping and other methods)
• Thermal process modules for ultra-shallow junctions (Solid Phase Epitaxial Regrowth, high ramp-rate RTA, laser and flash anneals…)
• Metallic junctions for SBFET (formation and characterisation of silicides with low barrier height, dopant segregation technique, SBFET device fabrication and characterisation)
• Silicide and germanide formation, including characterization (phase formation and morphology, growth kinetics, mechanical stress, thermal stability, contact resistance, formation of silicide contacts to SiGe and Si:C…)
• Structural and electrical characterisation of defects (TEM, SIMS, 4PP, Hall, SRP, SCM and other methods)
• Surface and interface interactions with point defects and dopants (point-defects injection and annihilation, dopant outdiffusion, interdiffusion and segregation at the Si/SiGe or oxide interfaces…)
• Dopant diffusion and activation (dopant-defect interaction, defect evolution, strain effects, clustering/deactivation, transient diffusion mechanisms, diffusion in a-Si…)
• Defect engineering (point-defect injection, vacancy generation by high-energy implants, impurity co-implantation)
• Simulation and modelling of the above listed effects (from ab-initio to continuum TCAD)

Invited speakers:
Y. Cho (Applied Materials), C. Claeys (IMEC), P. Deak (Univ. of Bremen), D. De Salvador (Univ. of Padova), J.M. Hartmann (LETI), M. Horstmann (AMD), M. Hytch (CEMES/CNRS), J. Kittl (Texas Instruments), D. Lenoble (ST Microelectronics), W. Lerch (Mattson Thermal Products), I. Cayrefourcq (SOITEC), A. Nylandsted-Larsen (Univ. of Aarhus), L. Pelaz (Univ. of Valladolid)

Proceedings:
Authors of accepted abstracts will be asked to submit an extended version of their work. The papers accepted after peer reviewing will be published in Materials Science and Engineering B. 

Symposium Support:

EU Integrated Project PullNANO (PULLING the limits of NANOCMOS electronics)

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Symposium organizers:

Fuccio CRISTIANO
LAAS/CNRS
7 av du Col Roche
31077 Toulouse
France
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Peter PICHLER
Fraunhofer IISB
Schottkystrasse 10
91058 Erlangen
Germany
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Anne LAUWERS
IMEC
Kapeldreef, 75
3001 Leuven
Belgium
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Thomas FEUDEL
AMD Saxony LLC & Co.
Wilschdorfer Landstr. 101
01109 Dresden
Germany
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Wolfgang WINDL
The Ohio State University
2041 College Road
Columbus OH 43210
USA
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