Symposium L 625.04 Kb
*** BREAKING NEWS ***
1. The deadline for the submission of full-length manuscripts (4pp for the contributed, 6 pp for the invited papers) HAS BEEN EXTENDED TILL OCTOBER, 15th.
2. Please submit the manuscripts via the Wiley-VCH online submission system in accrordance to the procedure described in the attached file.
Guidelines_pss_Scholar_One 23.23 Kb
3. The authors who already submitted their papers through the EMRS Fall meeting site using their personal login via My Abstracts are kindly asked to resubmit the manuscripts as described above. This will facilitate the handling of the manuscripts and accelerate their publication.
The organizers apologize for any inconvenience caused to you by this change of the submission procedure.
Symposium L summary:
E-MRS_Fall_2012_Symp_L_closing 137.11 Kb
One poster will be awarded among all symposium contributions. The author will receive a grant of 280 EUR.
The symposium addresses the growing interest of materials scientists and engineers in understanding and controlling the role of defects in the properties of low-dimensional materials. The latest achievements in theory and experiment as well as technological applications will be presented and discussed by academic and industrial researchers.
The tolerance of materials and devices to radiation- and growth-induced defects is well known to be crucial in many technological applications. Defect and disorder creation has been studied in detail, but renewed interest arises from the use of electron and ion beams to synthesize and modify nanoclusters and nanowires, create novel nano- and microelectronic devices based on ion tracks and other radiation-induced effects. Defect behavior in nanomaterials and nanostructures has often been found to differ substantially from that observed in bulk materials. Recent work has demonstrated rather spectacular optical and magnetic effects due to deliberately created defects and radiation-induced displacements in low-dimensional insulators and semiconductors, with exciting potential applications. We plan to discuss, how such defects could be categorized and controlled in nanostructures. Understanding and controlling defect properties in a wide class of advanced nanomaterials (graphene and CNT, multiferroics, quantum dots and wires, etc.) could well be a key to breakthroughs in several crucial areas of science and technology. This is the main focus of the symposium.
Hot topics to be covered by the symposium:
- Creation, evolution and properties of radiation defects in nanosize materials and heterostructures; the role of interfaces, nonstoichiometry, strain and adjacent layers in them.
- Effects of grain boundaries and interfaces on the diffusion and transport processes in nanomaterials.
- Defects in graphene.
- Electronic structure of defects in nanostructures; consequences for carrier transport, magnetism, optical and electronic properties, as well as device parameters.
- Use of defects as microprobes.
- Ab initio calculations and computer simulations.
- Novel technological processes of micro-, nano- and optoelectronics using defects and radiation effects in nanostructures.
List of confirmed invited speakers:
- Steven Zinkle (ORNL, Oak Ridge) “Fundamental aspects of radiation damage at the nanoscale”
- Joachim Maier (MPI Stuttgart) “Size effects on ion transport and storage in nanomaterials”
- Alexander Shluger (University College, London) “Modelling of electron and hole trapping at grain boundaries and interfaces in oxide nanostructures”
- Dmitri Golberg (NIMS, Tsukuba) “Influence of defects on electrical and mechanical properties of nanotubes, and nanosheets as revealed by in situ TEM”
- Ramamoorthy Ramesh (UC Berkeley) “Nanoscale interfacial control of magnetism in ferromagnetic-multiferroic heterostructures”
- Rainer Waser (JARA-FIT, Jülich), in collaboration with Vikas Rana, and Stephan Menzel “Fundamentals of ReRAM – materials, switching kinetics, and scaling potential”
- Florian Banhart (Université de Strasbourg) “Defect-induced growth of graphene and novel carbon nanostructures on metals”
- Marcelo Barbosa (Univ. Porto) "Thin films, nanostructures and ion implantation - a microscopic world viewed at atomic scale by exotic nuclear methods"
- Flyura Djurabekova (University of Helsinki), in collaboration with O.H. Pakarinen, M. Backman, A. Leino, K. Nordlund, L.L. Araujo and M.C.Ridgway, “Nanocrystals embedded in amorphous silica: interface defects and ion beam processing”
- Ion Tiginyanu (Ac. Sci., Chisinau) “Surface Charge Lithography: maskless nanofabrication based on surface radiation defects”
- Yuri Zhukovskii (University of Latvia, Riga) “Ab initio calculations of point defects in inorganic nanotubes”
- Rui Pereira (Universidade de Aveiro) “Electronic doping and defects in crystalline silicon nanoparticles”
- Yuichi Ikuhara (Tokyo University) “Atomic Structures and Chemistry of Ceramic Interface”
- Rustam Khaibullin (PTI, Kazan) “Effects of oxygen vacancies on ferromagnetism in oxide semiconductors, TiO2 & ZnO, implanted with 3d-ions”
- Mark Ridgway (ANU, Canberra) “Creation and Transformation of Embedded Metal Nanoparticles by Ion Irradiation”
The Symposium proceedings will be published in physica status solidi (c). Selected papers will be assigned as Feature Articles or Original Papers for physica status solidi (a), following a double peer-review process.
The Symposium L participants are kindly asked to upload their proceeding papers online before the first day of the Fall meeting (before Sunday September 16). Please use the phys. stat. sol. template for the preparation of the manuscript.
There will be a limited number of graduate assistantships (conference fee waivers) to allow students performing PhD work to present a poster.
The deadline for the Student Grant (conference fee waiver) request is June 8, 2012
To be eligible, students must be actively pursuing a PhD degree.
To apply for a conference fee waiver, they have to do the following:
- Submit a regular abstract of the subject they will present in a Symposium L session (submission deadline: May 28, 2012)
- Send to the email address
a short application (see below), accompanied by a scanned-in letter of support from the thesis advisor and a certificate of the university registration.
The letter of support and certificate must be transformed into the pdf format.
- The subject of the email should be as follows:
Grant application_Symp L 2012_Familyname_Name
Preference will be given to students nearing completion of their thesis work.
Student Grant application form (email body):
Authors and title of the submitted abstract:
Title of the thesis in preparation:
Name and affiliation of the thesis advisor:
Departamento de Física
Universidade de Aveiro
Campus de Santiago
Phone: +351 234 378117
Fax: +351 234 378197
Université Paris Sud
Phone: +331 6915 5222
Fax: +331 6915 5268
Institute of Solid State Physics
University of Latvia
8 Kengaraga str.
Max Planck Institute for solid state research
University of Helsinki
Phone: +358 9 19150007
Fax: +358 9 19150042