|Fall 12 E: Nanoscaled Si, Ge based materials: Fabrication, characterization, devices|
Nanoscaling of materials structures gives rise to specific and novel optical, electronic, magnetic, properties which have never been achieved in a macroscopic scale. Since the discovery of such effects in a wide range of applications, tremendous efforts, numerous publications, international symposia, and patents have been devoted to nanometer scale structures.
In this context, during this last decade, Group IV semiconductor nanostructures have been at the origin of exciting progress within the field of (i) information storage, (ii) optoelectronic devices, (iii) photovoltaics, (iv) telecommunications, (v) ecology as well as (vi) life science applications. Activities concern the development of nanocrystalline Si/Ge nanomemories, nc-Si/Ge based luminescent devices, Er-doped Si-rich amplifiers, fabrication of new absorbing layer or multilayers for the 3rd generation of solar cells, and biosensors. Such an intense activity is explained by the potential applications of Group IV nanostructures in future chips in which CMOS compatible electronic and photonic and/or biosensing components will be integrated.
In addition to the ongoing progress in this research field, a variety of new concepts have emerged very recently, including embedding Si/Ge quantum dots in new matrices like SiN, SiAlON, HfO, Al2O3; fabricating hybrid Ge (Si) nanowires or exchanging co-dopants like Er ions with Nd, Tb or Ce ions. This is mostly due to many problems still remaining unresolved, which have so far not allowed efficient applications of Si, Ge based nanostructures and to still increasing expectations from the industry stimulated by the market. The above makes the proposed topic very timely since the appearance of many new fresh concepts could bring a breakthrough in Group IV nanotechnology.
Thus, this symposium aims at gathering scientists and industrial partners from chemistry, biology, materials science and physics to verify the real potential of these “new and old” materials and to share and discuss the recent progress achieved in the fabrication approach of new nanostructures (layers and multilayers, nanowires, nanoclusters), in identifying the fundamental mechanisms of their excitation process, their optical properties, charge trapping, biosensing potential, and photovoltaic conversion for the next generation of Group IV devices and functional structures.
Hot topics to be covered by the symposium:
Tentative list of invited speakers:
The symposium proceedings will be published in Nanoscale Research Letter (Impact Factor 2.56).
During the Symposium there will be also a competition for young researchers for the best presentation.
|Une réalisation advisa.fr|