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Fall 12 E: Nanoscaled Si, Ge based materials: Fabrication, characterization, devices

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Nanoscaling of materials structures gives rise to specific and novel optical, electronic, magnetic, properties which have never been achieved in a macroscopic scale. Since the discovery of such effects in a wide range of applications, tremendous efforts, numerous publications, international symposia, and patents have been devoted to nanometer scale structures.

In this context, during this last decade, Group IV semiconductor nanostructures have been at the origin of exciting progress within the field of (i) information storage, (ii) optoelectronic devices, (iii) photovoltaics, (iv) telecommunications, (v) ecology as well as (vi) life science applications. Activities concern the development of nanocrystalline Si/Ge nanomemories, nc-Si/Ge based luminescent devices, Er-doped Si-rich amplifiers, fabrication of new absorbing layer or multilayers for the 3rd generation of solar cells, and biosensors. Such an intense activity is explained by the potential applications of Group IV nanostructures in future chips in which CMOS compatible electronic and photonic and/or biosensing components will be integrated.

In addition to the ongoing progress in this research field, a variety of new concepts have emerged very recently, including embedding Si/Ge quantum dots in new matrices like SiN, SiAlON, HfO, Al2O3; fabricating hybrid Ge (Si) nanowires or exchanging co-dopants like Er ions with Nd, Tb or Ce ions. This is mostly due to many problems still remaining unresolved, which have so far not allowed efficient applications of Si, Ge based nanostructures and to still increasing expectations from the industry stimulated by the market. The above makes the proposed topic very timely since the appearance of many new fresh concepts could bring a breakthrough in Group IV nanotechnology.

Thus, this symposium aims at gathering scientists and industrial partners from chemistry, biology, materials science and physics to verify the real potential of these “new and old” materials and to share and discuss the recent progress achieved in the fabrication approach of new nanostructures (layers and multilayers, nanowires, nanoclusters), in identifying the fundamental mechanisms of their excitation process, their optical properties, charge trapping, biosensing potential, and photovoltaic conversion for the next generation of Group IV devices and functional structures.

Hot topics to be covered by the symposium:

  1. Synthesis of silicon and germanium nanostructures
  2. Si, Ge-based plasmonic structures
  3. Nanostructured silicon and germanium for solar cells
  4. Si, Ge nanostructures for photonic applications
  5. Rare earth doped layers containing Si or Ge nanostructures
  6. Si, Ge for nanomemories
  7. Nanostructured silicon and germanium based optoelectronic devices
  8. Si, Ge nanostructures for biological and medical applications.

Tentative list of invited speakers:

  1. Wolfgang Skorupa, Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf, Germany
    More Moore or More-than-Moore or Nothing more? A nanoView on silicon & germanium...
  2. Blas Garrido, Departament d'Electrònica Universitat de Barcelona, Spain
    Si nanostructures and devices for advanced solar cells and LEDs
  3. Paul Shashi, Emerging Technologies Research Centre De Montfort University, UK
    Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications
  4. Brian A. Korgel, Department of Chemical Engineering, The University of Texas at Austin, Austin, USA
    Solution-Grown Silicon Nanowires
  5. Jean Francois Guillemoles, Chimie ParisTech, IRDEP, France
    Ab initio modeling of nanoscale Si-based materials for improved photovoltaic conversion
  6. Wilfried Van Sark, Department of Science, Technology and Society, Utrecht University, The Netherlands
    Upconversion for solar cells
  7. Al Meldrum, Dept. of Physics, University of Alberta, Edmonton, Canada, Refractometric sensing with cavity-coupled silicon nanocrystals
  8. Stefan Maier, Department of Physics, Imperial College London, UK, Plasmonics for control of nanoscale light emission

The symposium proceedings will be published in Nanoscale Research Letter (Impact Factor 2.56).

During the Symposium there will be also a competition for young researchers for the best presentation.

Symposium organizers:

Artur Podhorodecki
Institute of Physics
Wroclaw University of Technology
Wybrzeze Wyspianskiego 27
50-370 Wroclaw
Poland
Ph.+48 71 320 23 58
Fax:+48 71 320 23 58
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Fabrice Gourbilleau
CIMAP ENSICAEN
6 Boulevard Maréchal Juin
14050 Caen Cedex 4,
France
Ph.+33 231 45 26 56
Fax: +33 231 45 25 57
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Peter Mascher
McMaster University Hamilton
Ontario, Canada
Ph.+1 905 525 9140 X24963
Fax: +1 905 525 1062
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Gavin Conibeer
Photovoltaics Centre of Excellence
University of New South Wales
Sydney, NSW 2052
Australia
Ph.+61 2 9385 7858
Fax: +61 2 9385 5104
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Important deadlines

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     E-MRS FALL MEETING 13
    DEADLINE FOR ABSTRACT 
              SUBMISSION
             JUNE 10, 2013
 

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