The nitride semiconductors have emerged as important and promising materials for a wide field of optoelectronic and electronic applications. LEDs based on GaN and its alloys with InN and GaN exhibit green, blue and UV high brightness emission levels which are ready to serve many indoor and outdoor applications. Combined with the available red LEDs or by using RGB phosphors they can be used for displays as well as for illumination purpose in office, at home, in automobiles, aircraft airport runways, ships etc. Blue laser diodes based on the same material systems are already available to be used for data storage on CD ROMs with densities in excess of 1Gbite per cm2. This makes affordable high density digital information storage systems possible for a huge consumer market of movies in high picture quality on one CD ROM. Electronic devices based on Nitrides and SiC are using the superior electrical properties for high power, high frequency and high temperature applications. However, this huge potential of promising material properties and fields of applications can only be used in a wide and economic manner, if several substantial deficiencies and draw back of the materials can be overcome. These relate mostly to severe structural imperfections of the crystals and epitaxial layers and especially the lack of substrates for GaNhomoepitaxy.

Scope:

This symposium will provide a forum for active researchers in materials science and engineers working in device design, processing technologies, photonic and electronic devices of the group III-nitrides. Special emphasis on crystal polarity and their effect on the electronic properties will be placed, especially in the context of the improving the efficiency of light emitting devices operating in the green and longer range. The effect of strain resulting from lattice mismatch and thermal expansion differences will be explored. This symposium is a consequent continuation of earlier E-MRS symposia on related topics. The symposium will consist of both invited and contributed talks and poster sessions.

Hot topics to be covered by the symposium:

• Bulk growth of substrate crystals of GaN, and related alloys, including wafering
• Preparation of template substrates for GaN-based epitaxy including lift-off technology
• Epitaxial growth of nitride semiconductors, including modeling
• Optical characterization
• Defects and characterization of material properties
• Magnetic properties
• Nanostructures
• Device processing and technology and its correlation to material science, technology and materials properties
• Impact of crystal defects on device properties
• Specific processes required in wide bandgap technology (e.g. post implant annealing, etc.)
• Photonics

Tentative list of invited speakers:

• Martin Albrecht, IKZ Berlin: “High resolution TEM z-contrast”
• Yasuhiko Arakawa, Univ. Tokyo: “Nanolasers using nitride photonic bangap membranes”
• Shigefusa Chichibu, Tohoku Univ. Sendai: “The current status of research on AlN in Japan”
• Bruno Daudin, CEA Grenoble: “Aluminum Nitride nanorods”
• Mikhail Durnev, Ioffe Institute SP: “Exciton-plasmon coupling in nitride LEDS”
• Sachie Fujikawa, Riken, Tokyo: “Deep UV LEDs”
• Izabella Grzegory, Unipress, Warsaw: “GaN homoepitaxy”
• Thierry Guillet, Univ. Montpellier: “Nanolasers”
• Axel Hoffmann, TU, Berlin: “Nitride quantum dots”
• Serguey Ivanov, Ioffe SP: “MBE growth of Al-rich nitride heterostructures”
• Katsumi Kishino, Sophia University Tokyo: “Core shell LEDs”
• Alois Krost, OVGU, Magdeburg: “the GaN/Si challenge”
• Hideto Miyake, Mie Univ.: “High Al content nitride low dimensional systems”
• Eva Monroy, CEA Grenoble: “Nitrides and nergy harvesting issues”
• S. J. Park, Gwangju Institute of Sci. & Tech., Korea: “Plasmon-enhanced III-N LEDs”
• Tanya Paskova, Rice University: “HVPE issues”
• Fabrice Semond, CRHEA-CNRS: “Transistors grown by MBE”
• Tao Wang, Univ. Sheffield: “Improving III-nitride LED Performance Through Nanostructure”
• Xinqiang Wang, Peking Univ., Beijing, China “Growth and characterization of extremely high quality In-rich InGaN and its application for novel photonic devices”
• C.C. Yang, National Taiwan Univ., Taipei, Taiwan: “Any topics on III-Ns, including growth, characterization, novel photonic devices”
• Euijoon Yoon, Seoul National Univ., Seoul, Korea: “Improved Crystal quality of a-plane GaN on r-plane sapphire by controlled integration of silica nano-spheres”

Publication:

The proceedings of this symposium will be published in the journal physica status solidi

Symposium organizers:

Jürgen Christen
Institut of Experimental Physics
Faculty of Natural Science
Otto-von-Guericke-University Magdeburg
Universitaetsplatz 2
39106 Magdeburg
Germany
Phone: +49 391 67 18669 / 18678
Fax: +49 391 67 11130
This e-mail address is being protected from spam bots, you need JavaScript enabled to view it

Bernard Gil
Groupe d’Etude des Semiconducteurs - CC074
Université de Montpellier II
Place Eugène Bataillon
34095 Montpellier cedex 05
France
Phone: +33 (0)4 67 14 39 24
Fax: +33 (0)4 67 14 37 60
This e-mail address is being protected from spam bots, you need JavaScript enabled to view it

Russell Dean Dupuis
School of Electrical and Computer Engineering
Georgia Institute of Technology
777 Atlantic Drive NW
Atlanta, GA 30332-0250
USA
Phone: +1 404 385 6094
Fax: +1 404 385 6096
This e-mail address is being protected from spam bots, you need JavaScript enabled to view it

Matthew Phillips
Centre of Expertise Microstructural Analysis
Department of Physics and Advanced Materials
Faculty of Science
University of Technology Sydney
PO Box 123, Broadway
Sydney, NSW 2007
Australia
Phone: +61 2 9514 1620
Fax: +61 2 9514 1703
This e-mail address is being protected from spam bots, you need JavaScript enabled to view it

Akihiko Yoshikawa
Department of Electronics and Mechanical Engineering
Center for Frontier Electronics and Photonics
Chiba University
1-33 Yayoi-cho, Inage-ku
Chiba, 263-8522
Japan
Phone: +81 43 290 3329
Fax: +81 43 290 3360
This e-mail address is being protected from spam bots, you need JavaScript enabled to view it