|SPRING 13 G:|
Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications
The symposium joins alternative approaches of wide bandgap materials in light emitting and light absorbing mode. In particular it focuses on SiC and related materials which apply growth methods and study optical properties to explore new technologies such as LEDs, sensors and solar cells. The symposium is including bulk and interface phenomena that influence the materials properties.
The growth topic is focused on growth methods which explore approaches in bulk and epitaxial growth of semiconductors, including heteroepitaxy. In this aspect, important factors which would influence the materials properties by carrier mobility and their recombination at interfaces and surfaces are interesting. Such influence which could also be observed in the bulk of the materials is also a scope of the symposium. The optical properties topic is focused on optical phenomena in fluorescence, absorption and up-conversion applications of SiC and related wide bandgap materials.
Hot topics to be covered by the symposium:
The topics address emerging materials with potential to explore new technologies in energy saving solutions. New scientific insights are expected to be high-lighted in excitation, light creation, absorption phenomena in the materials, in particular when these are created using doping of the materials. The influence of interfaces on carrier lifetime and mobility, as well as defects charges, on the fundamental understanding will be a valuable scientific point for understanding both similar and different phenomena in new materials.
A joint session on silicon carbide will be organized with symposium M “Basic research on ionic-covalent materials for nuclear applications"
The proceedings of this symposium will be published in IOP Conference Series: Material Science and Engineering (MSE)
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