Symposium_F_Program 861.60 Kb
The nitride semiconductors have emerged as important and promising materials for a wide field of optoelectronic and electronic applications. LEDs based on GaN and its alloys with InN and GaN exhibit green, blue and UV high brightness emission levels which are ready to serve many indoor and outdoor applications. Combined with the available red LEDs or by using RGB phosphors they can be used for displays as well as for illumination purpose in office, at home, in automobiles, aircraft airport runways, ships etc. Blue laser diodes based on the same material systems are already available to be used for data storage on CD ROMs with densities in excess of 1Gbite per cm2. This makes affordable high density digital information storage systems possible for a huge consumer market of movies in high picture quality on one CD ROM. Electronic devices based on Nitrides and SiC are using the superior electrical properties for high power, high frequency and high temperature applications. However, this huge potential of promising material properties and fields of applications can only be used in a wide and economic manner, if several substantial deficiencies and draw back of the materials can be overcome. These relate mostly to severe structural imperfections of the crystals and epitaxial layers and especially the lack of substrates for GaN-homoepitaxy.
This symposium will provide a forum for active researchers in materials science and engineers working in device design, processing technologies, photonic and electronic devices of the group III-nitrides. Special emphasis on crystal polarity and their effect on the electronic properties will be placed, especially in the context of the improving the efficiency of light emitting devices operating in the green and longer range. The effect of strain resulting from lattice mismatch and thermal expansion differences will be explored. This symposium is a consequent continuation of earlier E-MRS symposia on related topics. The symposium will consist of both invited and contributed talks and poster sessions.
Hot topics to be covered by the symposium:
- Bulk growth of substrate crystals of GaN, and related alloys, including wafering
- Preparation of template substrates for GaN-based epitaxy including lift-off technology
- Epitaxial growth of nitride semiconductors, including modeling
- Optical characterization
- Defects and characterization of material properties
- Magnetic properties
- Device processing and technology and its correlation to material science, technology and materials properties
- Impact of crystal defects on device properties
- Specific processes required in wide bandgap technology (e.g. post implant annealing, etc.)
The proceedings of this symposium will be published in the journal Phisica Status Solidi by Wiley.
List of invited speakers/talks:
- Hiroshi Amano (Nagoya University, Japan) "High temeprature MOVPE of AlGaN for UV/DUV devices and increased pressure MOVPE of InGaN for green/yellow devices"
- Oliver Brandt (Paul Drude Institute, Berlin, Germany) "Photoluminescence as a probe for the surface physics and chemistry of GaN nanowires"
- Connie Chang Hasnain (Berkeley University, Berkeley, USA) “Nanolaser on Silicon Substrate”
- Shigefusa Chichibu (Tohoku Univ, Sendai, Japan) "TRPL and TRCL of AlN and high AlN molar fraction AlGaN alloys"
- Juergen Christen (University of Magdeburg, Germany) "Nano-scale characterization of nitrides using helium temperature scanning transmission electron microscopy cathodoluminescence"
- Bruno Daudin (CEA Grenoble, France) "Nucleation of GaN nanowires grown by molecular beam epitaxy: its relation to length distribution"
- Nicolas Grandjean (EPFL, Lausanne, Switzerland) "Non-polar microcavity for polariton lasing"
- Russel Dupuis (Georgia Institute of Technology, USA) "III-N LEDs"
- Marius Grundmann (University of Leipzig, Germany) "ZnO nanorods and their conformal coating with functional layers"
- Izabella Grzegory (Unipress, Warsaw, Poland), "High Nitrogen Pressure Solution growth of large area GaN substrates in single and multi-seed configurations"
- Thierry Guillet (University Montpellier 2, France) "High quality factor photonic resonators for nitride quantum dots"
- Katsumi Kishino (Sophia University, Tokyo, Japan) "Emission Characteristics of InGaN/GaN-MQW Nanocolumn Arrays"
- Michael Kneissl (TUB, Berlin, Germany) "Indium incorporation and optical properties of light emitters on non- and semipolar GaN"
- Pierre Lefebvre (Madrid, Spain) "Surface-related optical properties of GaN and InGaN nanocolumns"
- Richard Leonelli (Quebec, Canada) "Time-resolved spectroscopy in InGaN-QWs"
- Hideto Miyake (Mie university , Japan) "Ultraviolet light source using MOVPE grown Si-doped AlGaN/AlN on sapphire"
- Umesh Mishra, (Univ. Santa Barbara, California, USA) to be confirmed
- Yusuke Mori (Osaka university, Japan) "Growth of bulk GaN crystal by Na flux method"
- Kevin PC. O’Donnell (Univ. Strathclyde, Glasgow, UK) "Strategies for All-Nitride All-Colour Lighting"
- Fabrice Semond (CRHEA, Valbonne, France) "Monolithic Integration of Group III nitride-based devices with silicon"
- Zlatko Sitar (Univ. North Carolina, Raleigh, USA) "Recent developments in AlN crystal growth and AlN-based technology"
- Andreas Waag (Tech. Univ. Braunschweig, Germany) "Growth of nitride-based nanocolumns for device applications"
- C.C. Yang (NTU, Taiwan) "Growths of regularly patterned GaN and InGaN Nanorods"
CNRS and Université Montpellier II
GES - CC074
34095 Montpellier Cedex 5
Tel.:+33 467 14 3924
Fax:+33 467 14 3760
The University of Tokyo
4-6-1 Komaba, Meguro-ku
Tel.:+81 (3) 5452-5130 or 6245
Fax:+81 (3) 5452-6246
Technische Universität Berlin
Institut für Festkörperphysik
Tel: +49 (0)30 3142 2001
Fax: +49 (0)30 3142 2064
Department of Electronic Science and Engineering
Tel.:+81 75 383 2310
Fax:+81 75 383 2312
Future Chips Constellation Professor CII-7117
Department of Physics
Rensselaer Polytechnic Institute
Troy, New York