E-MRS Spring 2012 - Symposium W
Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III
This E-MRS symposium is aimed to:
•give an overview of the current status of optical and x-ray metrology for materials characterization and quality assurance of thin films, layer-structured materials, and one-dimensional nanomaterials, with a particular emphasis on state-of-the-art metrology;
•promote and encourage the interaction between academic and industrial research (instrument manufacture, IC and optoelectronics industry and materials suppliers) to address scientific and technological challenges associated with the improvement of standard analytical methods and qualification of newer techniques.
First we would like to highlight the trends and advances in the techniques of optical and X-ray metrology for thin film materials and heterostructures, Quantum Dots, Quantum Dashes, nanowires and nanotubes and secondly, we will address the application of such techniques to the study of a) thin-layered films and nanostructures in the field of monolithic integration of photonics on Si (both lattice-matched approach with diluted nitrides, related III-V compounds and nanostructures, and metamorphic approach: III-V thin-layered heterostructures onto an oxide/Si pseudo-substrate, Antimonide-based heterostructures), b) thin-layered films and nanostructures in the field of LEDs/Lasers dedicated to the 1.55 μm optical telecommunications, c) thin-layered films and nanostructures in the field of III/V-based heterostructures for high-efficiency multijunction solar cell, d) thin-layered films and nanostructures in the field of functional oxides (Transparent conductive oxides, low- and high-k materials), e) as well as graphene, nanotubes and nanowires based on all these materials.
As manufacturing processes become more complicated, it is imperative to employ in-situ metrology; this is particularly true in the microelectronics industry, such as compound semiconductor electronics, photonics, and sensors. Among the various X-ray based methods, standard X-ray diffractometry, X-ray reflectivity and diffuse scattering are acquiring an increasing relevance for characterization of materials and devices in academic and industrial laboratories, since these techniques are rapid, high resolution, non-destructive and non-contacting. In addition, the availability of high brilliance X-ray Synchrotron sources and the recent development of new X-ray scattering techniques offers new opportunities for non-destructive characterization of microstructures and the unique opportunity of characterization of micrometer-sized (or smaller) objects. The current trends in optical metrology mainly concern spectroscopic ellipsometry (SE), polarisation and modulation spectroscopy, anisotropic reflectance and Near Field Optical Microscopy (nanoRaman, nanoIR). Both optical and X-ray related techniques have gained considerable interest in the last decade and are currently involved in the characterization of thin film materials and nanomaterials. In this symposium, these methods will be discussed with particular attention paid to their application, as well as their limitations and complementarities.
The complementary contribution at the atomic scale of analytical and structural electron microscopy to the achievement of advanced materials for nanoscale devices will be also highlighted through a few selected invited talks.
Hot topics to be covered by the symposium
1) Advances in instrumentation, data analysis and modeling in both optical and X-ray scattering techniques. Instrumentation:
Data Analysis and modelling
2) Optical and X-ray metrology for advanced materials, nanomaterials and nanoscale devices.
A.Diebold (University of New York, USA); T.Hofmann (University Nebraska, USA); S.Pennycook (Oak Ridge National Lab, USA); H.Fujiwara (Gifu University, Japan); K.Hinrichs (ISAS – Berlin, Germany); E.Kessels (Eindhoven University of Technology, The Netherlands); M.Campoy-Quiles (ICMAB, Spain); S.Kazarian (Imperial College, London); P. van Nijnatten (OMT Solution, The Netherlands); J.Groenen (CEMES, France); A.Gustafsson (Univ. of Lund, Sweden); L. Lazzarini (IMEM, Italy); T. Baumbach (Linz University, Austria, to be confirmed); G. Renaud (CEA-Grenoble, INAC/SP2M/NRS, ESRF, France); L. Kirste (Fraunhofer Institute of Applied Solid State Physics, Germany).
J.Humlicek (Univ. of Brno, Czech Republic); P.-E.Hansen (Danish Fundamental Metrology, Denmark); A.Letoublon (FOTON-INSA, France); M. Guillou-Viry (Univ. Rennes, France); J.-F. Guillemoles (IRDEP-CNRS, France); B.Servet (Thales R&T, France); G. St Girons(Institut des Nanosciences de Lyon, France); W.Stolz(Univ of Marburg, Germany); P.Petrik (MFA, Hungary); M.Losurdo (Univ. Bari, Italy); Y.Watanabe (JST-ERATO, Japan); M.Kildemo (NTNU, Norway); N.Tomozeiu (OCE, Netherlands); M.F. Gartner (ICEFIZ, Romania); M. I. Alonso (ICMAB, Barcelona,Spain); D. Balzar (Univ. of Denver, USA); T. Germer, (NIST, USA); H. Wormeester ( U. Twente)
Symposium W proceedings: Thin Solid Films, Elsevier
Gerald E. Jellison
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